| PART |
Description |
Maker |
| FQPF9N90C FQPF9N90CT FQP9N90C |
N-Channel QFETMOSFET 900V, 8A, 1.4
N-Channel QFET MOSFET 900 V, 8.0 A, 1.4 Ohm
|
Fairchild Semiconductor
|
| 2SK2700 |
3 A, 900 V, 4.3 ohm, N-CHANNEL, Si, POWER, MOSFET
|
|
| 2SK1943-01 |
OSC 5V 8PIN CMOS 5 A, 900 V, 2.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-channel MOS-FET
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
|
| IRFBF20PBF |
1.7 A, 900 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
VISHAY SILICONIX
|
| STY16NA90 |
N-CHANNEL 900 V - 0.5 OHM - 16 A - EXTREMELY LOW GATE CHARGE POWER MOSFET
|
ST Microelectronics
|
| FQP5N90 |
900V N-Channel MOSFET 5.4 A, 900 V, 2.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| FQA9N90 |
900V N-Channel MOSFET 8.6 A, 900 V, 1.3 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| 9N90L-T47-T 9N90G-T47-T 9N90G-T3P-T 9N90L-T3P-T 9N |
900V N-CHANNEL MOSFET
9 A, 900 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET
|
UNISONIC TECHNOLOGIES CO LTD
|
| FQA11N90C |
900V N-Channel MOSFET 11 A, 900 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET
900V N-Channel Advanced QFET C-Series
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| APT64GA90LD30 |
Insulated Gate Bipolar Transistor - Power MOS 8; Package: TO-264; BV(CES) (V): 900; VCE(sat) (V): 3.1; IC (A): 64; 117 A, 900 V, N-CHANNEL IGBT, TO-264AA
|
Microsemi, Corp.
|
| APT46GA90JD40 |
High Speed PT IGBT
Insulated Gate Bipolar Transistor - Power MOS 8; Package: ISOTOP®; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 46; 87 A, 900 V, N-CHANNEL IGBT
|
Microsemi Corporation
Microsemi, Corp.
|
|
